2003. 2. 24 1/2 semiconductor technical data KDR377E schottky barrier type diode revision no : 2 low voltage high speed switching. features low forward voltage : v f(2) =0.43v (typ.) small package : esc. maximum rating (ta=25 ) esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e 1. anode 2. cathode f 0.13 0.05 f + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) characteristic symbol rating unit maximum (peak) reverse voltage v rm 40 v reverse voltage v r 40 v maximum (peak) forward current i fm 150 ma average forward current i o 30 ma surge current (10ms) i fsm 200 ma power dissipation p d 150* mw junction temperature t j 125 storage temperature range t stg -55 125 * : mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. type name marking v u characteristic symbol test condition min. typ. max. unit forward voltage v f(1) i f =1ma - 0.29 0.37 v v f(2) i f =30ma - 0.43 0.55 reverse current i r v r =40v - - 20 a total capacitance c t v r =1v, f=1mhz - 6.0 - pf
2003. 2. 24 2/2 KDR377E revision no : 2 reverse voltage v (v) r c - v t terminal capacitance c (pf) tr 0 1 3 5 10 30 50 ta=25 c i - v f f f forward voltage v (v) 0 10 f forward current i (ua) 0.2 2 ta=25 c 0.4 0.6 0.8 1 10 10 3 10 4 10 5 10 6 i - v r reverse voltage v (v) 010 r reverse current i ( a) rr 10 2 10 3 10 20 30 40 50 60 10 20 30 40 ta=25 c f=1mhz
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